Indentation-induced damage in GaN epilayers
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منابع مشابه
Optical properties of Pr implanted GaN epilayers and AlxGa1−xN alloys
It has been shown recently that III–V nitrides serve as a good host for rare earth elements and have many potential applications in optical communications. Most work in rare earth implanted III-nitride materials so far has been focused on GaN, while AlGaN alloys should have advantages over GaN due to wider energy band gap. In this work, photoluminescence (PL) spectroscopy was used to investigat...
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In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN) epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM) to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred o...
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GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those ob...
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We have studied the effects of rapid thermal annealing at 1300 °C on GaN epilayers grown on AlN buffered Si 111 and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal...
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تاریخ انتشار 2015